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EEJA has an established reputation for its chemical processing technology, particularly in semiconductor production, and for its high quality.
We can propose the Chemical process that matches the needs of the customer, selecting the solution through sample plating or analysis.
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Process |
Metal |
Product name |
Application |
| MICROFAB |
Au |
Au140
Au620
Au640
Au660
(Au100) |
Au bump plating |
| Au310 |
Au fine pattern forming |
| Ni |
Ni100
Ni200 |
Ni barrier forming |
| Cu |
Cu200 |
Cu bump plating |
| Cu250 |
Cu post plating |
| Cu300 |
Cu fine pattern forming |
| Cu500 |
Cu via filling |
| Solder |
SP200 |
Solder bump plating |
| PRECIOUSFAB |
Au |
IG7901 |
Non-cyanide immersion Au plating for electroless nickel |
| IG7903 |
Non-cyanide immersion Au plating for electro nickel |
| Pt |
Pt1000 |
DRAM Capacitor formation Pt metals plating |
| Ru |
Ru1000 |
DRAM Capacitor formation Ru metals plating |
| GALVANO-MEISTER |
Au |
GB-1 |
Au bump plating |
| GB-2 |
High speed Au bump plating |
| Cu |
CVF-1 |
Cu via filling for PWB |
| CVF-5 |
Cu via filling for PWB |
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| • |
MICROFAB Au140 (Au:10g/L)
Applicable to fine pitch for MF-Au100 |
| • |
MICROFAB Au620 (Au:12g/L)
MF-Au120 capable of high-speed operation |
| • |
MICROFAB Au640 (Au:14g/L)
Applicable to fine pitch for MF-Au100 |
| • |
MICROFAB Au660 (Au:16g/L)
MF-Au640 capable of high-speed operation |
•(*) MICROFAB Au100
Standard solution |
|
LECTROLESS |
Au1100 |
AU1200 |
Au1300 |
FX-1 |
FX-3 |
| Au |
2 |
2 |
2 |
4 |
2 |
| pH |
4.0 |
4.75 |
5.8 |
4.75 |
4.75 |
| Temp |
90 |
80 |
90 |
90 |
90 |
| Deposit thickness |
0.05μm/10min |
0.05μm/10min |
0.10μm/10min |
0.50μm/30min |
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| Seal Performance |
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| Solder Wettability |
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| Solder Bond Strength |
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| Wire Bonding Property |
-- |
-- |
-- |
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| • |
Application Example for Fin Pattern Au Bump
Liquid display driver IC
MICROFAB Au Series |
| • |
Application Example for via Hall plating
Compound semiconductor (Ga/As)
MICROFAB Au series |
| • |
Application Example for Cu post
Wafer Level CSP
MICROFAB Cu series |
| • |
Application Example for Cu Re-wiring
Wafer Level CSP
MICROFAB Cu, Ni Series & PRECIOUSFAB Series |
| • |
Application Example for Pt Group Plating Process
Next generation DRAM capacitor electrode formation
PRECIOUSFAB Pt-group Series |
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Application Example for Cu Plating Process for Filled-via
Via formation on build-up substrate
*Applicable to a wide range of vias φ45-100μm diameter
*Excellent in-plate uniformity
*High throughput |
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