| • |
Provide target materials without pinholes, oxides or gases. |
| • |
High-purity precious metal vapor deposition materials can be processed into granules, blocks, rods, wires and other forms. |
| • |
Bonding conditions with the backing plate are assured by inspection with ultrasonic flaw detection. |
| • |
Precision cleaning of devices, jigs, and reprocessing of recycled precious metals are also available. |
|
Standard Items |
High Purity Items |
Alloys |
Gold series |
4N |
5Nup |
Au-Si,Au-Zn,Au-Sb, etc.
Carat Au (9K to 18K) |
Platinum series |
4N |
5Nup |
Pt-Rh,Pt-Pd,Pt-Ir,Pt-Co,Pt-Ni,etc. |
Iridium series *1 |
3N |
4Nup |
---------- |
Rhodium series *1 |
3N |
4Nup |
Various |
Palladium series |
3N |
3Nup |
Various |
Ruthenium series *2 |
4N |
5Nup |
---------- |
Silver series |
4N |
5Nup |
Various |
|
| *1. |
High melting point materials, such as Ir and Rh, can be manufactured from an ingot without oxides, gases, holes, etc., by using casting method. |
| *2. |
Ru will be manufactured in high-purity vapor deposition material (marbleized). Test sputtering process for selecting composition of target is available. |
| • |
Thin film for die-bonding, LED (electrodes), quartz crystals (patterning electrodes), CD-R, DVD, gate electrodes for electronic devices, electrodes for electronic devices and oxide dielectric elements, etc. |
| • |
Electroformed Targets were developed especially for semiconductor applications. (newly developed product.) |
| • |
High purity of 5N level is obtainable. |
| • |
Total impurities of base metals can be lowered below 10ppm.
Gaseous impurities are hardly included. |
| • |
Column crystal structures growing through thickness with keeping highly orientations. (See Schematic Structure below.) |
| • |
Relatively finer grain (column) size can be achieved, even in Iridium and Ruthenium which have higher melting points. |
| • |
Stable sputtering rate can be maintained through the life time. |
| • |
Ruthenium (Ru) |
| • |
Purity: 3N~5N (Standard: 3N and 4N.) |
| • |
Maximum size of 18 inches in diameter can be made. |
FeRAM, D-RAM, MRAM, HDD, etc..
|
unit:ppm |
Pt |
Au |
Ag |
Pd |
Rh |
Ir |
Os |
Li |
Be |
B |
*C |
*N |
8.4 |
<0.1 |
<0.1 |
<0.1 |
22 |
49 |
0.2 |
<0.1 |
<0.1 |
<0.1 |
1.3 |
0.1 |
*O |
Na |
Mg |
Al |
Si |
P |
*S |
*Cl |
K |
Ca |
Ti |
Cr |
0.29 |
0.1 |
<0.1 |
0.39 |
0.1 |
<0.1 |
/ |
2.8 |
0.21 |
0.44 |
<0.1 |
<0.1 |
Mn |
Fe |
Co |
Ni |
Cu |
Zn |
Ga |
Ge |
As |
Se |
Rb |
Sr |
<0.1 |
1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
Zr |
Nb |
Mo |
Cd |
In |
Sn |
Sb |
Te |
Hg |
Hf |
V |
W |
<0.1 |
<0.1 |
<0.1 |
0.15 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
Re |
Tl |
Pb |
Bi |
Th |
U |
(Exclude gaseous compounds ( * ). |
<0.1 |
<0.1 |
<0.1 |
<0.1 |
<0.005 |
<0.005 |
|
|
Ru purity (exclude PGMs)(%): 99.9998 |
Ru purity (include PGMs) (%): 99.992 |
|
|
